IRFB3806PBF
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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About IRFB3806PBF
The International Rectifier IRFB3806PBF Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3. Key parameters include Continuous Drain Current (ID): 43A, Drain-source On Resistance-Max: 15.8MR, Drain to Source Voltage (Vdss): 60V, Gate to Source Voltage (Vgs): 20V, and Height: 9.02mm. IRFB3806PBF is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
- File Size
- 551 KB
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Parameters
| Continuous Drain Current (ID) | 43A |
| Drain-source On Resistance-Max | 15.8MR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 1.15nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 71W |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package/Case | TO-220AB |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 6.3ns |
| Width | 4.82mm |