IRF540NS

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

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About IRF540NS

The International Rectifier IRF540NS Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3. Key parameters include Continuous Drain Current (ID): 33A, Gate to Source Voltage (Vgs): 20V, Max Operating Temperature: 175°C, Min Operating Temperature: -55°C, and Mount: Surface Mount. IRF540NS is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
International Rectifier
Category
Semiconductors

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Parameters

Continuous Drain Current (ID)33A
Gate to Source Voltage (Vgs)20V
Max Operating Temperature175°C
Min Operating Temperature-55°C
MountSurface Mount
Number of Elements1
Package/CaseD2PAK
Power Dissipation130W
RoHSNot Compliant
RoHS CompliantNo