IRF540NS
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
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About IRF540NS
The International Rectifier IRF540NS Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3. Key parameters include Continuous Drain Current (ID): 33A, Gate to Source Voltage (Vgs): 20V, Max Operating Temperature: 175°C, Min Operating Temperature: -55°C, and Mount: Surface Mount. IRF540NS is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
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Parameters
| Continuous Drain Current (ID) | 33A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package/Case | D2PAK |
| Power Dissipation | 130W |
| RoHS | Not Compliant |
| RoHS Compliant | No |