EPC2020
N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a low on-resistance of 0.0022 ohms and a drain-source voltage rating of 60V. Supports a continuous drain current of 60A. This single-element device is presented as a DIE-30 package with 30 terminals.
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About EPC2020
The Efficient Power Conversion EPC2020 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a low on-resistance of 0.0022 ohms and a drain-source voltage rating of 60V. Supports a continuous drain current of 60A. This single-element device is presented as a DIE-30 package with 30 terminals.. Key parameters include Military Spec: False, Number of Elements: 1, Number of Terminals: 30, REACH: Compliant, and RoHS: Yes. EPC2020 is manufactured by Efficient Power Conversion as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Efficient Power Conversion
- Category
- Semiconductors
- File Size
- 2 MB
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Parameters
| Military Spec | False |
| Number of Elements | 1 |
| Number of Terminals | 30 |
| REACH | Compliant |
| RoHS | Yes |
| Terminal Position | UNSPECIFIED |