IPB036N12N3GATMA1
Power Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN
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About IPB036N12N3GATMA1
The Infineon IPB036N12N3GATMA1 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN. Key parameters include Continuous Drain Current (ID): 180A, Drain to Source Voltage (Vdss): 120V, Fall Time: 21ns, Gate to Source Voltage (Vgs): 20V, and Halogen Free: Halogen Free. IPB036N12N3GATMA1 is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 635 KB
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Parameters
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 120V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 13.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 120V |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 300W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package/Case | TO-263-7 |
| Rds On Max | 3.6mR |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 35ns |