IRF3710PBF
This N-channel silicon power MOSFET is rated for 100 V drain-to-source voltage and 57 A continuous drain current at 25°C case temperature. It is specified with a maximum drain-to-source on-resistance of 23 mΩ at VGS = 10 V and uses the TO-220AB through-hole package. The device supports operation from -55°C to 175°C and is fully avalanche rated with fast switching characteristics. The datasheet also identifies dynamic dv/dt capability and lead-free construction for industrial applications.
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About IRF3710PBF
The Infineon IRF3710PBF Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: This N-channel silicon power MOSFET is rated for 100 V drain-to-source voltage and 57 A continuous drain current at 25°C case temperature. It is specified with a maximum drain-to-source on-resistance of 23 mΩ at VGS = 10 V and uses the TO-220AB through-hole package. The device supports operation from -55°C to 175°C and is fully avalanche rated with fast switching characteristics. The datasheet also identifies dynamic dv/dt capability and lead-free construction for industrial applications.. Key parameters include Eccn Code: EAR99, JEDEC Package Code: TO-220AB, Max Operating Temperature: 175, Military Spec: False, and Min Operating Temperature: -55. IRF3710PBF is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 222 KB
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Parameters
| Eccn Code | EAR99 |
| JEDEC Package Code | TO-220AB |
| Max Operating Temperature | 175 |
| Military Spec | False |
| Min Operating Temperature | -55 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH | Compliant |
| RoHS | Yes |
| Terminal Position | SINGLE |