IRFZ44E
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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About IRFZ44E
The International Rectifier IRFZ44E Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN. Key parameters include Continuous Drain Current (ID): 48A, Current Rating: 48A, DC Rated Voltage: 60V, Drain to Source Breakdown Voltage: 60V, and Drain to Source Voltage (Vdss): 60V. IRFZ44E is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
- File Size
- 50 KB
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Parameters
| Continuous Drain Current (ID) | 48A |
| Current Rating | 48A |
| DC Rated Voltage | 60V |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 1.36nF |
| Lead Free | Contains Lead |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package/Case | TO-220-3 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 23mR |
| RoHS | Not Compliant |
| RoHS Compliant | No |
| Series | HEXFET® |