IRF640N
The IRF640N is a 200V N-Channel MOSFET with a continuous drain current of 18A. It features a TO-220AB package with a flange mount, suitable for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 150W. The IRF640N is not RoHS compliant.
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About IRF640N
The International Rectifier IRF640N Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The IRF640N is a 200V N-Channel MOSFET with a continuous drain current of 18A. It features a TO-220AB package with a flange mount, suitable for through-hole mounting. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 150W. The IRF640N is not RoHS compliant.. Key parameters include Continuous Drain Current (ID): 18A, Drain to Source Voltage (Vdss): 200V, Gate to Source Voltage (Vgs): 20V, Input Capacitance: 1.16nF, and Max Operating Temperature: 175°C. IRF640N is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
- File Size
- 50 KB
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Parameters
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.16nF |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 150W |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package/Case | TO-220AB |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 150W |
| Rds On Max | 150mR |
| RoHS | Not Compliant |
| RoHS Compliant | No |