IPB072N15N3GATMA1
N-Channel Power MOSFET, 150V Vdss, 100A continuous drain current, and 7.2mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package. Maximum power dissipation is 300W, with operating temperatures ranging from -55°C to 175°C. The component is RoHS compliant and Halogen Free.
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About IPB072N15N3GATMA1
The Infineon IPB072N15N3GATMA1 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Power MOSFET, 150V Vdss, 100A continuous drain current, and 7.2mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package. Maximum power dissipation is 300W, with operating temperatures ranging from -55°C to 175°C. The component is RoHS compliant and Halogen Free.. Key parameters include Continuous Drain Current (ID): 100A, Drain to Source Resistance: 5.8mR, Drain to Source Voltage (Vdss): 150V, Gate to Source Voltage (Vgs): 20V, and Halogen Free: Halogen Free. IPB072N15N3GATMA1 is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 735 KB
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Parameters
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 5.8mR |
| Drain to Source Voltage (Vdss) | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.47nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 300W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 7.2mR |
| Package/Case | TO-263-3 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 300W |
| Rds On Max | 7.2mR |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |