EPC2021
N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for high-power applications. Features a low on-resistance of 0.0025 ohms and a drain-source voltage rating of 80V. Supports a continuous drain current of 60A. This single-element device is presented as a 30-terminal die.
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About EPC2021
The Efficient Power Conversion EPC2021 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for high-power applications. Features a low on-resistance of 0.0025 ohms and a drain-source voltage rating of 80V. Supports a continuous drain current of 60A. This single-element device is presented as a 30-terminal die.. Key parameters include Military Spec: False, Number of Elements: 1, Number of Terminals: 30, REACH: Compliant, and RoHS: Yes. EPC2021 is manufactured by Efficient Power Conversion as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Efficient Power Conversion
- Category
- Semiconductors
- File Size
- 2 MB
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Parameters
| Military Spec | False |
| Number of Elements | 1 |
| Number of Terminals | 30 |
| REACH | Compliant |
| RoHS | Yes |
| Terminal Position | UNSPECIFIED |