IRG4BC30W
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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About IRG4BC30W
The International Rectifier IRG4BC30W Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN. Key parameters include Collector Emitter Breakdown Voltage: 600V, Collector Emitter Saturation Voltage: 2.7V, Max Operating Temperature: 150°C, Max Power Dissipation: 100W, and Package/Case: TO-220. IRG4BC30W is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
- File Size
- 139 KB
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Parameters
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 100W |
| Package/Case | TO-220 |
| Reach SVHC Compliant | No |
| RoHS | Not Compliant |
| RoHS Compliant | No |