STP75NF75
N-channel power MOSFET featuring 75V drain-source breakdown voltage and 80A continuous drain current. This STripFET™ II device offers a low 9.5mΩ typical drain-source on-resistance and 11mΩ maximum. Housed in a TO-220 package for through-hole mounting, it supports a maximum power dissipation of 300W and operates from -55°C to 175°C. Key switching characteristics include a 25ns turn-on delay and 30ns fall time.
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About STP75NF75
The Stmicroelectronics STP75NF75 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel power MOSFET featuring 75V drain-source breakdown voltage and 80A continuous drain current. This STripFET™ II device offers a low 9.5mΩ typical drain-source on-resistance and 11mΩ maximum. Housed in a TO-220 package for through-hole mounting, it supports a maximum power dissipation of 300W and operates from -55°C to 175°C. Key switching characteristics include a 25ns turn-on delay and 30ns fall time.. Key parameters include Continuous Drain Current (ID): 80A, Current Rating: 80A, DC Rated Voltage: 75V, Drain-source On Resistance-Max: 11mR, and Drain to Source Breakdown Voltage: 75V. STP75NF75 is manufactured by Stmicroelectronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Stmicroelectronics
- Category
- Semiconductors
- File Size
- 390 KB
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Parameters
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| DC Rated Voltage | 75V |
| Drain-source On Resistance-Max | 11mR |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.15mm |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 300W |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package/Case | TO-220 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 25ns |
| Width | 4.6mm |