FQP50N06
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 50A continuous drain current. This TO-220AB packaged component offers a low 22mΩ drain-source on-resistance. Key electrical characteristics include a 4V threshold voltage and 1.54nF input capacitance. Designed for through-hole mounting, it operates within a -55°C to 175°C temperature range and supports 120W maximum power dissipation.
Similar Components
2N3906G
PNP bipolar junction transistor (BJT) in a TO-92 package, suitable for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 250MHz. With a maximum power dissipation of 625mW, this through-hole component operates across a wide temperature range from -55°C to 150°C. The TO-92 package has a body height of 5.33mm and is supplied in bulk packaging.
TIP42C
PNP Bipolar Junction Transistor (BJT) in TO-220-3 package. Features a collector-emitter voltage of -100V, maximum collector current of 6A, and a power dissipation of 65W. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C.
SS16F
1.0 A, 60 V Surface Mount Schottky Barrier Rectifiers, 3000-REEL
SS18
Surface mount general purpose rectifier with 1A average rectified current and 80V repetitive reverse voltage. Features a DO-214AC package, 40A peak non-repetitive surge current, and a maximum operating temperature of 125°C. This lead-free component offers a maximum reverse leakage current of 200uA.
MMSZ5243B
The MMSZ5243B is a surface mount zener diode with a working voltage of 13V and a tolerance of 5%. It has a maximum power dissipation of 500mW and a maximum reverse current of 500nA. The diode is rated for operation between -55°C and 150°C. It is lead free and RoHS compliant.
MMBTA56
PNP Bipolar Junction Transistor (BJT) in SOT-23 package. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Offers a maximum power dissipation of 350mW and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
About FQP50N06
The Onsemi FQP50N06 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 50A continuous drain current. This TO-220AB packaged component offers a low 22mΩ drain-source on-resistance. Key electrical characteristics include a 4V threshold voltage and 1.54nF input capacitance. Designed for through-hole mounting, it operates within a -55°C to 175°C temperature range and supports 120W maximum power dissipation.. Key parameters include Continuous Drain Current (ID): 50A, Current Rating: 50A, DC Rated Voltage: 60V, Drain-source On Resistance-Max: 22mR, and Drain to Source Breakdown Voltage: 60V. FQP50N06 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
- File Size
- 748 KB
Ask AI Assistant
Ask questions about FQP50N06 specifications
Click to ask a quick question:
Parameters
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| DC Rated Voltage | 60V |
| Drain-source On Resistance-Max | 22mR |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.4mm |
| Input Capacitance | 1.54nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 120W |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package/Case | TO-220AB |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | PowerTrench®, SyncFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
| Weight | 1.8g |
| Width | 4.7mm |