SI4435DDY-T1-GE3
P-channel, silicon, surface-mount field-effect transistor designed for small signal applications. Features a continuous drain current of 8.1A and a drain-to-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 24mR, with turn-on and turn-off delay times of 42ns and 40ns respectively. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Packaged in an SOP-8 (SO) case, this component is halogen-free and RoHS compliant.
Similar Components
MMSZ4699
Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional,
SI4946BEY-T1-GE3
N-Channel Power MOSFET, 60V Drain-Source Voltage, 6.5A Continuous Drain Current, and 41mΩ Max Drain-Source On-Resistance. Features 2 N-Channel elements in a surface-mount SO package with 2-Element configuration. Offers 10ns turn-on delay, 10ns fall time, and 25ns turn-off delay. Operates from -55°C to 175°C, with 3.7W max power dissipation. Compliant with HALOGEN FREE and ROHS standards.
IRF9530
P-channel power MOSFET transistor with a DC rated voltage of -100V and continuous drain current of 12A. Features a low Rds On of 300mR, maximum power dissipation of 88W, and operates within a temperature range of -55°C to 175°C. Packaged in a TO-220AB through-hole mount, this component offers fast switching speeds with turn-on delay of 12ns and fall time of 39ns.
IRF520
N-Channel Power MOSFET featuring 100V Drain-Source Voltage (Vdss) and 9.2A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 270mΩ Drain-Source On-Resistance (Rds On) and a maximum power dissipation of 60W. Designed for through-hole mounting in a TO-220AB package, it exhibits fast switching characteristics with a turn-on delay of 8.8ns and a fall time of 20ns. Operating temperature range spans from -55°C to 175°C.
IRFZ44N
N-Channel Enhancement-Mode MOSFET with dynamic dv/dt rating, repetitive avalanche rated, 175°C operating temperature, ease of paralleling, fast switching for high efficiency, and simple drive requirements. Packaged in JEDEC TO-220AB molded plastic body. Terminals are solderable per MIL-STD-750, Method 2026. High temperature soldering is guaranteed at 250°C/10 seconds, 0.17\" (4.3mm) from case. Mounting torque is 10 in-lbs maximum. Weight is 2.0g.
SI2305DS-T1-GE3
P-channel power MOSFET with 8V drain-source voltage (Vdss) and 3.5A continuous drain current (ID). Features low 52mR drain-to-source resistance (Rds On Max) and 1.25W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a SOT-23-3 surface-mount case, this RoHS compliant component offers fast switching with turn-on delay of 13ns and fall time of 25ns.
About SI4435DDY-T1-GE3
The Vishay SI4435DDY-T1-GE3 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: P-channel, silicon, surface-mount field-effect transistor designed for small signal applications. Features a continuous drain current of 8.1A and a drain-to-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 24mR, with turn-on and turn-off delay times of 42ns and 40ns respectively. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Packaged in an SOP-8 (SO) case, this component is halogen-free and RoHS compliant.. Key parameters include Continuous Drain Current (ID): 8.1A, Drain-source On Resistance-Max: 24MR, Drain to Source Breakdown Voltage: -30V, Drain to Source Resistance: 24mR, and Drain to Source Voltage (Vdss): -30V. SI4435DDY-T1-GE3 is manufactured by Vishay as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Vishay
- Category
- Semiconductors
- File Size
- 212 KB
Ask AI Assistant
Ask questions about SI4435DDY-T1-GE3 specifications
Click to ask a quick question:
Parameters
| Continuous Drain Current (ID) | 8.1A |
| Drain-source On Resistance-Max | 24MR |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2.5W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package/Case | SO |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.006596oz |
| Width | 4mm |