IRF530

N-channel MOSFET with 100V drain-source voltage and 14A continuous drain current. Features 160mΩ maximum drain-source on-resistance and 88W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB through-hole mount, this component offers fast switching with turn-on delay of 10ns and fall time of 24ns.

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About IRF530

The Vishay IRF530 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel MOSFET with 100V drain-source voltage and 14A continuous drain current. Features 160mΩ maximum drain-source on-resistance and 88W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB through-hole mount, this component offers fast switching with turn-on delay of 10ns and fall time of 24ns.. Key parameters include Continuous Drain Current (ID): 14A, Drain-source On Resistance-Max: 160mR, Drain to Source Resistance: 160mR, Drain to Source Voltage (Vdss): 100V, and Fall Time: 24ns. IRF530 is manufactured by Vishay as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Vishay
Category
Semiconductors
File Size
263 KB

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Parameters

Continuous Drain Current (ID)14A
Drain-source On Resistance-Max160mR
Drain to Source Resistance160mR
Drain to Source Voltage (Vdss)100V
Fall Time24ns
Gate to Source Voltage (Vgs)20V
Height9.01mm
Input Capacitance670pF
Lead FreeContains Lead
Length10.41mm
Max Operating Temperature175°C
Max Power Dissipation88W
Min Operating Temperature-55°C
MountThrough Hole
Number of Channels1
Number of Elements1
Package/CaseTO-220AB
Package Quantity50
PackagingRail/Tube
PolarityN-CHANNEL
Power Dissipation88W
Radiation HardeningNo
Rds On Max160mR
Reach SVHC CompliantUnknown
RoHSNot CompliantNo
RoHS CompliantNo
Turn-Off Delay Time23ns
Turn-On Delay Time10ns
Weight0.211644oz
Width4.7mm