NCE01H14G
This N-channel enhancement-mode power MOSFET is rated for 100 V drain-to-source voltage and 140 A continuous drain current at 25°C. It uses trench technology to achieve 4.5 mΩ typical on-resistance at 10 V gate drive and 120 nC typical total gate charge. The device is housed in a TO-220-3L package with 330 W maximum power dissipation and 0.45 °C/W junction-to-case thermal resistance. It supports 1200 mJ single-pulse avalanche energy, operates from -55 °C to 175 °C, and is marked as a Pb-free product.
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About NCE01H14G
The NCE Power NCE01H14G Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: This N-channel enhancement-mode power MOSFET is rated for 100 V drain-to-source voltage and 140 A continuous drain current at 25°C. It uses trench technology to achieve 4.5 mΩ typical on-resistance at 10 V gate drive and 120 nC typical total gate charge. The device is housed in a TO-220-3L package with 330 W maximum power dissipation and 0.45 °C/W junction-to-case thermal resistance. It supports 1200 mJ single-pulse avalanche energy, operates from -55 °C to 175 °C, and is marked as a Pb-free product.. Key parameters include Continuous Drain Current: 140A, Continuous Drain Current at Tc=100°C: 97A, Drain-Source On-Resistance: 4.5 typ, 6.5 maxmΩ, Drain-Source Voltage: 100V, and Forward Transconductance: 170S. NCE01H14G is manufactured by NCE Power as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- NCE Power
- Category
- Semiconductors
- File Size
- 356 KB
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Parameters
| Continuous Drain Current | 140A |
| Continuous Drain Current at Tc=100°C | 97A |
| Drain-Source On-Resistance | 4.5 typ, 6.5 maxmΩ |
| Drain-Source Voltage | 100V |
| Forward Transconductance | 170S |
| Gate-Drain Charge | 35nC |
| Gate-Source Charge | 30nC |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Input Capacitance | 7650pF |
| Operating Junction Temperature Range | -55 to 175°C |
| Output Capacitance | 540pF |
| Pb-free | Yes |
| Power Dissipation | 330W |
| Pulsed Drain Current | 550A |
| Reverse Recovery Charge | 80 typ, 120 maxnC |
| Reverse Recovery Time | 45 typ, 70 maxns |
| Reverse Transfer Capacitance | 250pF |
| Single Pulse Avalanche Energy | 1200mJ |
| Thermal Resistance Junction-to-Case | 0.45°C/W |
| Total Gate Charge | 120nC |