IRFB3607PBF

The IRFB3607PBF is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 80A and a drain-source voltage of 75V. The device has a maximum power dissipation of 140W and a gate to source voltage of 20V. It is available in a TO-220AB package with a lead-free termination and is RoHS compliant.

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About IRFB3607PBF

The International Rectifier IRFB3607PBF Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The IRFB3607PBF is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 80A and a drain-source voltage of 75V. The device has a maximum power dissipation of 140W and a gate to source voltage of 20V. It is available in a TO-220AB package with a lead-free termination and is RoHS compliant.. Key parameters include Continuous Drain Current (ID): 80A, Drain-source On Resistance-Max: 9MR, Drain to Source Voltage (Vdss): 75V, Dual Supply Voltage: 75V, and Gate to Source Voltage (Vgs): 20V. IRFB3607PBF is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
International Rectifier
Category
Semiconductors
File Size
412 KB

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Parameters

Continuous Drain Current (ID)80A
Drain-source On Resistance-Max9MR
Drain to Source Voltage (Vdss)75V
Dual Supply Voltage75V
Gate to Source Voltage (Vgs)20V
Height9.02mm
Input Capacitance3.07nF
Lead FreeLead Free
Length10.66mm
Max Operating Temperature175°C
Max Power Dissipation140W
Min Operating Temperature-55°C
MountThrough Hole
Nominal Vgs4V
Package/CaseTO-220AB
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
TerminationThrough Hole
Turn-Off Delay Time43ns
Turn-On Delay Time16ns
Width4.82mm