Onsemi
1N4001
General purpose rectifier diode with a 1A forward current and 50V reverse voltage rating. Features a 30A peak non-repetitive surge current capability and 3W power dissipation. Encased in a DO-41 package with tin, matte contact plating, this through-hole component operates from -55°C to 175°C. It offers a low 5uA reverse current and 15pF capacitance.
1N4002
General purpose rectifier diode with a 1A average rectified current and 100V repetitive reverse voltage. Features a 1A forward current, 30A maximum surge current, and 3W power dissipation. This single element diode is housed in a DO-41 axial package with tin, matte contact plating and supports through-hole mounting. Operating temperature range is -55°C to 175°C, with a low 5uA maximum reverse current.
1N4004
General purpose rectifier diode featuring a 400V repetitive reverse voltage and 1A forward current. This single element diode is housed in a DO-41 package with tin, matte contact plating and supports through-hole mounting. It offers a maximum forward surge current of 30A and operates within a temperature range of -55°C to 175°C. The component has a capacitance of 15pF and a power dissipation of 3W, with a maximum reverse current of 5µA.
1N4148WT
Small signal switching rectifier diode for general-purpose applications. Features a maximum repetitive reverse voltage of 75V and a maximum reverse voltage of 75V DC. Offers a fast reverse recovery time of 4ns, an average rectified current of 200mA, and a forward current of 300mA. Packaged in a 2-pin SOD-523 surface mount package, supplied on tape and reel. Operates across a temperature range of -55°C to 150°C.
1N4448
General purpose rectifier diode featuring 200mA average rectified current and 4A peak non-repetitive surge current. This through-hole component offers a fast 4ns reverse recovery time and a maximum repetitive reverse voltage of 100V. With a 500mW power dissipation and a compact DO-35 package, it operates across a wide temperature range from -65°C to 175°C.
1N4699
Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH
1N5401
General purpose rectifier diode with a 3A average rectified current and 100V repetitive reverse voltage. Features a 3A forward current, 200A peak non-repetitive surge current, and 6.25W power dissipation. Housed in a DO-201AD through-hole package, this RoHS compliant component operates from -55°C to 150°C.
1N5404
General purpose rectifier diode featuring a 400V repetitive reverse voltage and 3A average rectified current. This single element diode is housed in a DO-201AD package with tin, matte contact plating and supports through-hole mounting. It offers a maximum forward surge current of 200A and operates within a temperature range of -55°C to 150°C. The component has a capacitance of 30pF and a power dissipation of 6.25W, with RoHS compliance.
2N3904G
NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. Operates with a 60V collector-base voltage and a 6V emitter-base voltage. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 300MHz. Packaged in a TO-92 (TO-226) through-hole configuration, with a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
2N3906G
PNP bipolar junction transistor (BJT) in a TO-92 package, suitable for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 250MHz. With a maximum power dissipation of 625mW, this through-hole component operates across a wide temperature range from -55°C to 150°C. The TO-92 package has a body height of 5.33mm and is supplied in bulk packaging.
2N7002
N-Channel Enhancement Mode Field Effect Transistor, SOT-23 package, offering a 60V drain-source voltage and 115mA continuous drain current. Features a low 7.5 Ohm maximum drain-source on-resistance and a 2.1V threshold voltage. Operates across a wide temperature range from -55°C to 150°C with 200mW maximum power dissipation. This surface mount transistor is RoHS compliant and available on a 3000-piece tape and reel.
2N7002DW
Dual N-Channel MOSFET, 60V Vds, 115mA ID, 7.5 Ohm Rds(on). Surface mount SC package with 1.25mm width, 2mm length, and 1mm height. Features 50pF input capacitance, 5.85ns turn-on delay, and 12.5ns turn-off delay. Operating temperature range from -55°C to 150°C with 200mW power dissipation. RoHS compliant.
2N7002K
N-Channel MOSFET, surface mount, featuring a 60V drain-source breakdown voltage and 300mA continuous drain current. Offers a maximum drain-source on-resistance of 2 Ohms and a threshold voltage of 2.5V. This component operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 350mW. Packaged in a TO-236-3 case, it is supplied on a 3000-piece tape and reel.
2N7002W
N-Channel MOSFET, single element, surface mount in SOT-323 package. Features 60V drain-source breakdown voltage, 115mA continuous drain current, and 7.5 Ohm drain-source on-resistance. Operates from -55°C to 150°C with 200mW power dissipation. Includes 5.85ns turn-on delay and 12.5ns turn-off delay. RoHS compliant with tin matte contact plating.
78L05
This device is a fixed positive linear voltage regulator that provides a nominal 5 V output with output current up to 100 mA. The MC78L00A series datasheet states that the family includes internal short-circuit current limiting and internal thermal overload protection, and many applications do not require external components for basic regulation. For the 5 V variant, the electrical characteristics table shows a typical dropout voltage of 1.7 V at 25°C and typical ripple rejection of 49 dB at 120 Hz. The standard application circuit uses a 0.33 µF input capacitor when the regulator is located an appreciable distance from the supply filter, and a 0.1 µF output capacitor can improve transient response.
BAS16
Small signal switching diode, single configuration, features 85V peak reverse repetitive voltage and 0.2A maximum continuous forward current. This surface mount component, housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads, offers a 6ns peak reverse recovery time. Maximum power dissipation is 350mW, with an operating temperature range of -55°C to 150°C.
BAT54
Single, surface mount Schottky diode with a 30V DC rated voltage and 200mA forward current. Features a 200mA average rectified current, 600mA peak non-repetitive surge current, and 2µA maximum reverse leakage. This RoHS compliant component offers a 10pF capacitance and 5ns reverse recovery time, housed in a compact SOT-23 package. Operating temperature range spans from -55°C to 150°C.
BAT54A
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAT54C
Schottky diode array, surface mount, SOT-23 package. Features 30V reverse voltage, 200mA average rectified current, and 600mA peak non-repetitive surge current. Offers a low capacitance of 10pF and a fast 5ns reverse recovery time. Operates across a wide temperature range from -55°C to 150°C. RoHS compliant with tin-matte contact plating.
BAV70
General purpose rectifier diode array in a SOT-23 surface mount package. Features a maximum repetitive reverse voltage of 70V and an average rectified current of 200mA. Offers a low capacitance of 1.5pF and a fast reverse recovery time of 6ns. Operates across a wide temperature range from -55°C to 150°C, with a peak non-repetitive surge current capability of 2A.