IRLZ44N

A fast switching and low resistance, allowing it to be controlled by low-voltage signals (like 5V from an Arduino) to switch higher power loads, making it great for motor control, LED drivers, and power supplies. It's available in a common TO-220 package and features high current (around 47A) and voltage (55V) handling, offering efficiency in various power applications

Download PDF

Similar Components

IRLR2905TRPBF

N-Channel Power MOSFET, DPAK package, offering 55V DC rated voltage and 42A continuous drain current. Features low on-resistance of 0.03ohm and 110W maximum power dissipation. Designed for surface mounting with a compact DPAK footprint (6.73mm L x 6.22mm W x 2.39mm H). Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 15ns. Lead-free and RoHS compliant.

International RectifierSemiconductors
23 3

IRF2807PBF

N-Channel Power MOSFET, 75V drain-source voltage, 82A continuous drain current, and 0.013 ohm maximum on-resistance. Features a TO-220AB through-hole package, 230W maximum power dissipation, and operates from -55°C to 175°C. Includes 3.82nF input capacitance and 49ns turn-off delay. RoHS compliant and lead-free.

International RectifierSemiconductors
24 2

IRFP90N20DPBF

N-Channel Power MOSFET featuring 200V drain-source voltage and 94A continuous drain current. Offers low 23mΩ on-state resistance and 580W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 23ns and turn-off delay of 43ns.

International RectifierSemiconductors
18 3

IRFB3206PBF

N-Channel Power MOSFET featuring 60V drain-source voltage and 210A continuous drain current. Offers low 3mΩ drain-source on-resistance and 300W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include 6.54nF input capacitance and 4V threshold voltage.

International RectifierSemiconductors
19 4

IRFB4110PBF

N-Channel Power MOSFET, 100V drain-source voltage, 180A continuous drain current, and 4.5mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting and a maximum power dissipation of 370W. Operating temperature range is -55°C to 175°C, with a gate-source voltage of 20V. RoHS compliant and lead-free.

International RectifierSemiconductors
24 3

IRFP260N

Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN

International RectifierSemiconductors
22 5

About IRLZ44N

The International Rectifier IRLZ44N Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: A fast switching and low resistance, allowing it to be controlled by low-voltage signals (like 5V from an Arduino) to switch higher power loads, making it great for motor control, LED drivers, and power supplies. It's available in a common TO-220 package and features high current (around 47A) and voltage (55V) handling, offering efficiency in various power applications. Key parameters include Drain-source On Resistance-Max: 22mR, Drain to Source Voltage (Vdss): 55V, Gate Threshold Voltage (Vgs(th)): 1.0 V to 2.0 V (typical), High Current: Up to 47A continuous drain current, and Logic-Level Gate: Can be fully turned on with just 5V on the gate, ideal for microcontrollers.. IRLZ44N is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
International Rectifier
Category
Semiconductors

Ask AI Assistant

Ask questions about IRLZ44N specifications

AI Powered

Click to ask a quick question:

Parameters

Drain-source On Resistance-Max22mR
Drain to Source Voltage (Vdss)55V
Gate Threshold Voltage (Vgs(th))1.0 V to 2.0 V (typical)
High CurrentUp to 47A continuous drain current
Logic-Level GateCan be fully turned on with just 5V on the gate, ideal for microcontrollers.
Low On-Resistance (Rds(on))0.022 Ohms
Operating Temperature-55°C to 175°C
PackageTO-220
RoHSNot Compliant
RoHS CompliantNo
TypeN-Channel Power MOSFET