Onsemi
BAV99
Ultra-fast switching diode with 70V reverse voltage and 200mA average rectified current. Features 1.5pF capacitance and 6ns reverse recovery time. Packaged in a SOT-23 surface mount case with tin, matte contact plating. Operates from -55°C to 150°C with 350mW power dissipation. RoHS compliant and lead-free.
BC327
PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a collector-emitter voltage (VCEO) of 45V and a maximum collector current of 800mA. Offers a transition frequency of 260MHz and a minimum hFE of 100. Operates across a wide temperature range from -55°C to 150°C. Through-hole mount design with lead-free and RoHS compliant construction.
BC337
NPN bipolar junction transistor in TO-92 package, featuring a 45V collector-emitter breakdown voltage and 800mA maximum collector current. Offers a 100MHz transition frequency and a minimum hFE of 100. Designed for through-hole mounting with a maximum power dissipation of 625mW. Operates across a wide temperature range from -55°C to 150°C.
BC547
NPN bipolar junction transistor in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a DC rated voltage of 45V, a transition frequency of 300MHz, and a minimum DC current gain (hFE) of 110. Maximum power dissipation is 500mW, with operating temperatures ranging from -65°C to 150°C.
BC547B
NPN Epitaxial Silicon Transistor, TO-92-3 package. Features 45V Collector Emitter Voltage (VCEO), 100mA Max Collector Current, and 300MHz Transition Frequency. Offers a minimum hFE of 200 and a Max Power Dissipation of 500mW. Operates across a temperature range of -65°C to 150°C. Through-hole mount with lead-free and RoHS compliant construction.
BC548
NPN bipolar junction transistor in TO-92 package. Features a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates across a temperature range of -65°C to 150°C with a power dissipation of 500mW. Through-hole mounting for versatile integration.
BC548B
NPN Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Supplied in bulk packaging with 5000 units per box.
BC549
NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in bulk packaging.
BC557
PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 500mW. Through-hole mounting and RoHS compliant.
BC558
PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector current of 100mA and a collector-emitter voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 500mW. Lead-free and RoHS compliant.
BC847BS
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 250MHz. Packaged in a compact SC surface-mount case, this component operates across a wide temperature range from -55°C to 150°C. Supplied in a 3000-piece tape and reel.
BD137
The BD137 is a TO-225-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a collector-emitter saturation voltage of 500mV. It can handle a maximum collector current of 1.5A and a maximum power dissipation of 1.25W. The transistor operates within a temperature range of -55°C to 150°C and is not RoHS compliant due to the presence of lead.
BSS123
N-channel MOSFET transistor in a SOT-23 package, featuring a 100V drain-source breakdown voltage and a continuous drain current of 170mA. This surface-mount component offers a low drain-source on-resistance of 6 Ohms. Operating across a wide temperature range of -55°C to 150°C, it boasts fast switching speeds with a turn-on delay of 1.7ns and a fall time of 9ns. The device is RoHS compliant and designed for tape and reel packaging.
BSS138
N-channel enhancement-mode field-effect transistor supports logic-level gate drive in a compact SOT-23 surface-mount package. The device is rated for 50 V drain-source voltage and 220 mA continuous drain current. On-resistance is specified at 3.5 ohm maximum with 10 V gate drive and 6.0 ohm maximum with 4.5 V gate drive. The package is Pb-free and halogen-free, with reel packaging for automated assembly.
BSS138K
N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V Drain to Source Breakdown Voltage, 220mA Continuous Drain Current, and 1.6 Ohm maximum Drain-Source On Resistance. This single-element transistor features a 600mV nominal Gate to Source Voltage and 58pF input capacitance. Packaged in a SOT-23 surface mount case with tin, matte contact plating, it operates from -55°C to 150°C with 350mW maximum power dissipation. Ideal for switching applications, it offers fast switching speeds with turn-on delay times of 5ns and fall times of 35ns.
BSS138L
Single N-channel logic-level power MOSFET featuring 50V drain-source voltage and 200mA continuous drain current. This 3-terminal device offers a low on-resistance of 3.5 Ohms and is housed in a TO-236AB JEDEC package. Designed with one active element, it is supplied on a 3000-piece reel for high-volume applications.
BSS138W
N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V Drain to Source Voltage (Vdss), 210mA Continuous Drain Current (ID), and 3.5 Ohm Drain-source On Resistance-Max. This surface mount transistor features a SOT-323 package with tin, matte contact plating. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 340mW. Includes 2.3ns turn-on delay time and 6.5ns fall time.
BSS84
P-channel MOSFET, 50V drain-source breakdown voltage, 130mA continuous drain current, and 10 Ohm drain-source on-resistance. This surface-mount transistor features a 2.5ns turn-on delay and 6.3ns fall time, with a nominal gate-source threshold voltage of -1.7V. Packaged in a 3-pin SOT-23, it operates from -55°C to 150°C with a maximum power dissipation of 360mW.
BZX84C15
Surface mount Zener diode with a 15V DC rated voltage and 5% voltage tolerance. Features 350mW maximum power dissipation, 5mA Zener current, and 110pF capacitance. Encased in a compact SOT-23 package with tin, matte contact plating. Operates across a -55°C to 150°C temperature range and is RoHS compliant.
BZX84C30
Surface mount Zener diode with a 30V DC rated voltage and 30V Zener voltage. Features 350mW power dissipation, 7% tolerance, and 80 Ohm impedance. Encased in a SOT-23 package with tin matte contact plating, this RoHS compliant component operates from -55°C to 150°C.