PN2222

The PN2222 is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 600mA. It has a gain bandwidth product of 250MHz and a maximum power dissipation of 625mW. The transistor is rated for operation between -55°C and 150°C and is available in bulk packaging with 5000 units per package.

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About PN2222

The Onsemi PN2222 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The PN2222 is a TO-92-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 600mA. It has a gain bandwidth product of 250MHz and a maximum power dissipation of 625mW. The transistor is rated for operation between -55°C and 150°C and is available in bulk packaging with 5000 units per package.. Key parameters include Collector Base Voltage (VCBO): 60V, Collector Emitter Breakdown Voltage: 30V, Collector Emitter Saturation Voltage: 1.6V, Collector-emitter Voltage-Max: 1.6V, and Collector Emitter Voltage (VCEO): 30V. PN2222 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Onsemi
Category
Semiconductors

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Parameters

Collector Base Voltage (VCBO)60V
Collector Emitter Breakdown Voltage30V
Collector Emitter Saturation Voltage1.6V
Collector-emitter Voltage-Max1.6V
Collector Emitter Voltage (VCEO)30V
Emitter Base Voltage (VEBO)5V
Frequency250MHz
Gain Bandwidth Product250MHz
hFE Min35
Max Collector Current600mA
Max Operating Temperature150°C
Max Power Dissipation625mW
Min Operating Temperature-55°C
MountThrough Hole
Number of Elements1
Package/CaseTO-92-3
Package Quantity5000
PackagingBulk
PolarityNPN
Power Dissipation625mW
RoHSNot Compliant
RoHS CompliantNo
Transition Frequency250MHz