Q:What are the key specifications for BSS138?
The BSS138
BSS138
N-channel enhancement-mode field-effect transistor supports logic-level gate drive in a compact SOT-23 surface-mount package. The device is rated for 50 V drain-source voltage and 220 mA continuous drain current. On-resistance is specified at 3.5 ohm maximum with 10 V gate drive and 6.0 ohm maximum with 4.5 V gate drive. The package is Pb-free and halogen-free, with reel packaging for automated assembly.
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About BSS138
The Onsemi BSS138 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel enhancement-mode field-effect transistor supports logic-level gate drive in a compact SOT-23 surface-mount package. The device is rated for 50 V drain-source voltage and 220 mA continuous drain current. On-resistance is specified at 3.5 ohm maximum with 10 V gate drive and 6.0 ohm maximum with 4.5 V gate drive. The package is Pb-free and halogen-free, with reel packaging for automated assembly.. Key parameters include Case Outline: 318, Continuous Drain Current: 0.22, Drain-Source Voltage: 50, Gate Level: Logic Level, and Gate-Source Voltage: ±20. BSS138 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
- File Size
- 383 KB
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The BSS138
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Parameters
| Case Outline | 318 |
| Continuous Drain Current | 0.22 |
| Drain-Source Voltage | 50 |
| Gate Level | Logic Level |
| Gate-Source Voltage | ±20 |
| Halogen Status | Halogen Free |
| Lead Status | Pb Free |
| MSL Temperature | 260 |
| MSL Type | 1 |
| Package | SOT-23 |
| Pin 1 | Gate |
| Pin 2 | Source |
| Pin 3 | Drain |
| Pulsed Drain Current | 0.88 |
| RDS(on) Max at VGS 10 V | 3.5 |
| RDS(on) Max at VGS 4.5 V | 6.0 |
| Transistor Type | N-Channel MOSFET |