MMBT3906

PNP Bipolar Junction Transistor in SOT-23 package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. Surface mountable and RoHS compliant.

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About MMBT3906

The Onsemi MMBT3906 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: PNP Bipolar Junction Transistor in SOT-23 package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. Surface mountable and RoHS compliant.. Key parameters include Collector Base Voltage (VCBO): -40V, Collector Emitter Breakdown Voltage: 40V, Collector Emitter Saturation Voltage: -400mV, Collector-emitter Voltage-Max: 400mV, and Collector Emitter Voltage (VCEO): -40V. MMBT3906 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Onsemi
Category
Semiconductors
File Size
308 KB

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Parameters

Collector Base Voltage (VCBO)-40V
Collector Emitter Breakdown Voltage40V
Collector Emitter Saturation Voltage-400mV
Collector-emitter Voltage-Max400mV
Collector Emitter Voltage (VCEO)-40V
Current Rating-200mA
DC Rated Voltage-40V
Emitter Base Voltage (VEBO)-5V
hFE Min100
Lead FreeLead Free
Max Breakdown Voltage40V
Max Collector Current200mA
Max Operating Temperature150°C
Max Power Dissipation350mW
Min Operating Temperature-55°C
MountSurface Mount
Package/CaseSOT-23
Package Quantity1
PackagingCut Tape
PolarityPNP
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
Transition Frequency250MHz
Weight0.03g