TIP41

NPN bipolar junction transistor in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 6A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 2W.

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About TIP41

The Onsemi TIP41 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: NPN bipolar junction transistor in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 6A and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 2W.. Key parameters include Collector Base Voltage (VCBO): 40V, Collector Emitter Breakdown Voltage: 40V, Collector Emitter Saturation Voltage: 1.5V, Collector-emitter Voltage-Max: 1.5V, and Collector Emitter Voltage (VCEO): 40V. TIP41 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Onsemi
Category
Semiconductors

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Parameters

Collector Base Voltage (VCBO)40V
Collector Emitter Breakdown Voltage40V
Collector Emitter Saturation Voltage1.5V
Collector-emitter Voltage-Max1.5V
Collector Emitter Voltage (VCEO)40V
Current Rating6A
DC Rated Voltage40V
Emitter Base Voltage (VEBO)5V
Frequency3MHz
Gain Bandwidth Product3MHz
hFE Min30
Lead FreeLead Free
Max Collector Current6A
Max Operating Temperature150°C
Max Power Dissipation2W
Min Operating Temperature-65°C
MountThrough Hole
Number of Elements1
Package/CaseTO-220-3
Package Quantity200
PackagingBulk
PolarityNPN
Power Dissipation2W
Reach SVHC CompliantNo
RoHSNot Compliant
RoHS CompliantNo
SeriesTIP41
Transition Frequency3MHz