TIP42C

PNP Bipolar Junction Transistor (BJT) in TO-220-3 package. Features a collector-emitter voltage of -100V, maximum collector current of 6A, and a power dissipation of 65W. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C.

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About TIP42C

The Onsemi TIP42C Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: PNP Bipolar Junction Transistor (BJT) in TO-220-3 package. Features a collector-emitter voltage of -100V, maximum collector current of 6A, and a power dissipation of 65W. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Operates within a temperature range of -65°C to 150°C.. Key parameters include Collector Base Voltage (VCBO): 100V, Collector Emitter Breakdown Voltage: 100V, Collector Emitter Saturation Voltage: 1.5V, Collector-emitter Voltage-Max: 1.5V, and Collector Emitter Voltage (VCEO): -100V. TIP42C is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Onsemi
Category
Semiconductors

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Parameters

Collector Base Voltage (VCBO)100V
Collector Emitter Breakdown Voltage100V
Collector Emitter Saturation Voltage1.5V
Collector-emitter Voltage-Max1.5V
Collector Emitter Voltage (VCEO)-100V
Current Rating-6A
DC Rated Voltage-100V
Emitter Base Voltage (VEBO)5V
Gain Bandwidth Product3MHz
Height16.51mm
hFE Min30
Lead FreeLead Free
Length10.67mm
Max Breakdown Voltage100V
Max Collector Current6A
Max Frequency3MHz
Max Operating Temperature150°C
Max Power Dissipation65W
Min Operating Temperature-65°C
Package/CaseTO-220-3
Package Quantity50
PackagingRail/Tube
PolarityPNP
Power Dissipation65W
Reach SVHC CompliantNo
RoHSCompliant
Transition Frequency3MHz
Weight0.042823oz
Width4.83mm