MMBT4403
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 350mW. RoHS compliant and supplied on tape and reel.
Similar Components
BC548
NPN bipolar junction transistor in TO-92 package. Features a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates across a temperature range of -65°C to 150°C with a power dissipation of 500mW. Through-hole mounting for versatile integration.
P6SMB6.8CA
Bi-directional Transient Voltage Suppressor (TVS) diode for circuit protection. Features a 58.1V reverse stand-off voltage and 600W peak pulse power dissipation. This single element device offers a maximum clamping voltage of 92V and a maximum peak pulse current of 6.5A. Packaged in a 2-pin SMB (DO-214AA) surface-mount plastic package with J-lead configuration, it operates across a wide temperature range of -65°C to 150°C.
1N4002
General purpose rectifier diode with a 1A average rectified current and 100V repetitive reverse voltage. Features a 1A forward current, 30A maximum surge current, and 3W power dissipation. This single element diode is housed in a DO-41 axial package with tin, matte contact plating and supports through-hole mounting. Operating temperature range is -55°C to 175°C, with a low 5uA maximum reverse current.
SS34F
Surface mount rectifier diode with a 40V repetitive peak reverse voltage and a maximum operating temperature of 125°C. This dual-terminal, single-element silicon device offers a 3A current rating and operates across a temperature range of -55°C to 125°C. Designed for general-purpose rectification, it is supplied on a 3000-piece reel.
MBRS340T3G
Surface mount Schottky power rectifier with a maximum repetitive peak reverse voltage of 40V and a continuous forward current of 3.0A. This dual-terminal, single-element silicon rectifier operates across a wide temperature range from -65°C to 150°C. Designed for general-purpose rectification, it is supplied on a 2500-piece reel.
BC549
NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in bulk packaging.
About MMBT4403
The Onsemi MMBT4403 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 350mW. RoHS compliant and supplied on tape and reel.. Key parameters include Collector Base Voltage (VCBO): -40V, Collector Emitter Breakdown Voltage: 40V, Collector Emitter Saturation Voltage: 750mV, Collector-emitter Voltage-Max: 750mV, and Collector Emitter Voltage (VCEO): 40V. MMBT4403 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
Ask AI Assistant
Ask questions about MMBT4403 specifications
Click to ask a quick question:
Parameters
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector-emitter Voltage-Max | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| DC Current Gain-Min (hFE) | 20 |
| DC Rated Voltage | -40V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package/Case | SOT-23 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
| Weight | 0.03g |