MMBTA92
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a 300V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum hFE of 40 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
Similar Components
SS12
Surface mount Schottky rectifier with 1A average rectified current and 20V DC rated voltage. Features a 1A forward current, 40A peak non-repetitive surge current, and a maximum reverse leakage current of 200µA. Operates across a temperature range of -65°C to 125°C and is housed in a compact DO-214AC package. This RoHS compliant component offers 1.1W power dissipation and is supplied on a 7500-piece tape and reel.
BC327
PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a collector-emitter voltage (VCEO) of 45V and a maximum collector current of 800mA. Offers a transition frequency of 260MHz and a minimum hFE of 100. Operates across a wide temperature range from -55°C to 150°C. Through-hole mount design with lead-free and RoHS compliant construction.
SS34F
Surface mount rectifier diode with a 40V repetitive peak reverse voltage and a maximum operating temperature of 125°C. This dual-terminal, single-element silicon device offers a 3A current rating and operates across a temperature range of -55°C to 125°C. Designed for general-purpose rectification, it is supplied on a 3000-piece reel.
MMSZ5234B
DIODE ZENER 6.2V 500MW SOD123
FQP30N06L
N-channel Power MOSFET, Logic Level, 60V Drain-Source Breakdown Voltage, 32A Continuous Drain Current, and 35mΩ Max Drain-Source On-Resistance. Features a TO-220AB package for through-hole mounting, 79W max power dissipation, and operates from -55°C to 175°C. Includes 1.04nF input capacitance and fast switching times with 15ns turn-on delay. RoHS compliant and lead-free.
MJE13009
TRANS NPN 400V 12A TO220AB
About MMBTA92
The Onsemi MMBTA92 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a 300V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum hFE of 40 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.. Key parameters include Collector Base Voltage (VCBO): -300V, Collector Emitter Breakdown Voltage: 300V, Collector-emitter Voltage-Max: 500mV, Collector Emitter Voltage (VCEO): -300V, and Current Rating: -500mA. MMBTA92 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
Ask AI Assistant
Ask questions about MMBTA92 specifications
Click to ask a quick question:
Parameters
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | -300V |
| Current Rating | -500mA |
| DC Rated Voltage | -300V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 350mW |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package/Case | SOT-23 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| Weight | 0.03g |