Onsemi
FDN340P
Single P-Channel Logic Level PowerTrench® MOSFET with -20V Drain-Source Breakdown Voltage and 2A Continuous Drain Current. Features 70mΩ Max Drain-Source On Resistance and 500mW Max Power Dissipation. Operates from -55°C to 150°C, packaged in SOT-23 for surface mounting. Includes 11ns Fall Time and 27ns Turn-Off Delay Time.
FDP047N08
N-Channel MOSFET featuring 75V drain-source breakdown voltage and 164A continuous drain current. Offers a low 4.7mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, this single-element transistor operates from -55°C to 175°C with a maximum power dissipation of 268W. Includes fast switching characteristics with turn-on delay of 100ns and fall time of 114ns.
FDP047N10
N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 164A continuous drain current. This single-element MOSFET offers a low 4.7mΩ drain-source on-resistance and a maximum power dissipation of 375W. Packaged in a TO-220 through-hole mount, it operates from -55°C to 175°C and includes fast switching characteristics with turn-on delay of 174ns and fall time of 244ns.
FDP8440
N-Channel Logic Level PowerTrench® MOSFET featuring 40V drain-source breakdown voltage and a maximum continuous drain current of 277A. This single-element transistor offers a low 2.2mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C with a maximum power dissipation of 306W. Key switching characteristics include a 43ns turn-on delay and 290ns fall time.
FDV301N
N-Channel JFET, 25V Drain to Source Voltage (Vdss), 220mA Continuous Drain Current (ID). Features 4 Ohm Drain to Source Resistance (Rds On Max), 3.2ns Turn-On Delay Time, and 3.5ns Turn-Off Delay Time. Surface mount SOT-23 package, 350mW max power dissipation, operating temperature range of -55°C to 150°C. Lead free and RoHS compliant, supplied on a 3000-piece tape and reel.
FGA40N65SMD
Insulated Gate Bipolar Transistor (IGBT) with 650V Collector Emitter Breakdown Voltage and 40A continuous collector current. Features a low 2.5V Collector Emitter Saturation Voltage and 349W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Includes a 42ns reverse recovery time and 12ns turn-on delay. Packaged in a rail/tube for through-hole mounting, with 450 units per package.
FOD3180ASD
Single Channel 25 V 5000 Vrms MOSFET SMT Gate Driver Optocoupler - DIP-8
FQP30N06
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 30A continuous drain current. This component offers a low 40mΩ drain-source on-resistance and a maximum power dissipation of 79W. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C. Key electrical characteristics include a 4V threshold voltage, 945pF input capacitance, and fast switching times with turn-on delay of 10ns and fall time of 40ns.
FQP30N06L
N-channel Power MOSFET, Logic Level, 60V Drain-Source Breakdown Voltage, 32A Continuous Drain Current, and 35mΩ Max Drain-Source On-Resistance. Features a TO-220AB package for through-hole mounting, 79W max power dissipation, and operates from -55°C to 175°C. Includes 1.04nF input capacitance and fast switching times with 15ns turn-on delay. RoHS compliant and lead-free.
FQP50N06
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 50A continuous drain current. This TO-220AB packaged component offers a low 22mΩ drain-source on-resistance. Key electrical characteristics include a 4V threshold voltage and 1.54nF input capacitance. Designed for through-hole mounting, it operates within a -55°C to 175°C temperature range and supports 120W maximum power dissipation.
HCPL2630
High-speed, logic-output optocoupler featuring two channels for unidirectional signal transmission. Achieves a 10Mbps data rate with a 75ns propagation delay and 12ns fall time. Offers 2.5kV isolation voltage and a maximum output current of 50mA per channel. DIP package with through-hole mounting, operating from -40°C to 85°C.
IRF540
N-channel TrenchMOS transistor | MOSFET N-CH 100V 28A TO-220AB
IRF830
N-channel enhancement mode power MOSFET featuring 500V maximum drain-source voltage and 4.5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220 package with through-hole mounting. Key specifications include a maximum drain-source resistance of 1500 mOhm at 10V and a typical gate charge of 22 nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 75W.
LL4148
General purpose rectifier diode with a 100V repetitive reverse voltage and 200mA average rectified current. Features a 2A maximum forward surge current and 4ns reverse recovery time. This surface mount component operates from -65°C to 175°C and has a 500mW power dissipation. Packaged in tape and reel, it is RoHS compliant.
LM2904DR2G
Dual operational amplifier featuring a 1MHz gain bandwidth product and 0.6V/µs slew rate. This general-purpose op-amp operates from a wide supply voltage range of 1.5V to 32V, with a typical dual supply voltage of 9V and a maximum of 16V. It offers a voltage gain of 100dB and a common mode rejection ratio of 50dB, suitable for applications requiring 2 amplifiers. Packaged in a narrow SOIC-8 body, this component is RoHS and Halogen free, with a maximum operating temperature of 105°C.
LM301
General purpose operational amplifier featuring a 1MHz gain bandwidth product and 0.5V/µs slew rate. This single-channel, non-compensated op-amp offers a voltage gain of 104.08dB and a common mode rejection ratio of 70dB. It operates with a dual supply voltage range of 5V to 18V, drawing 2mA of operating supply current. Packaged in an 8-lead DIP for through-hole mounting, this lead-free and RoHS-compliant component is suitable for a wide range of applications.
LM301AN
General purpose operational amplifier featuring a 1MHz gain bandwidth product and 0.5V/µs slew rate. This single-channel, non-compensated op-amp offers a voltage gain of 104.08dB and a common mode rejection ratio of 70dB. It operates with a dual supply voltage range of 5V to 18V, drawing 2mA of operating supply current. Packaged in an 8-lead DIP for through-hole mounting, this lead-free and RoHS-compliant component is suitable for a wide range of applications.
LM336Z-2.5
Fairchild Semiconductor LM 336 Z Voltage Reference 2.5 V Case type TO92 Specification Voltage reference Output voltage 2
LM337
Adjustable negative linear voltage regulator, offering output voltages from -1.25V to -37V with a maximum output current of 1.5A. Features include current limit, safe area protection, short circuit protection, and thermal protection. This surface-mount device utilizes a D2PAK (TO-263) package with gull-wing leads, a 3-pin configuration, and a tab for enhanced thermal performance. Operating within a -0°C to 125°C temperature range, it boasts a typical PSRR of 77 dB and a junction-to-case thermal resistance of 4°C/W.
LM350
Adjustable positive linear voltage regulator IC, featuring an output voltage range of 1.2V to 33V and a maximum output current of 1A. This through-hole component, housed in a TO-220 package, offers single output with adjustable voltage and a reference voltage of 1.3V. Key technical specifications include 0.03%/V line regulation and 0.5% load regulation, with integrated current limit, safe area protection, short circuit protection, and thermal protection. Operating temperature range is from 0°C to 125°C.