1N4001

General purpose rectifier diode with a 1A forward current and 50V reverse voltage rating. Features a 30A peak non-repetitive surge current capability and 3W power dissipation. Encased in a DO-41 package with tin, matte contact plating, this through-hole component operates from -55°C to 175°C. It offers a low 5uA reverse current and 15pF capacitance.

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About 1N4001

The Onsemi 1N4001 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: General purpose rectifier diode with a 1A forward current and 50V reverse voltage rating. Features a 30A peak non-repetitive surge current capability and 3W power dissipation. Encased in a DO-41 package with tin, matte contact plating, this through-hole component operates from -55°C to 175°C. It offers a low 5uA reverse current and 15pF capacitance.. Key parameters include Average Rectified Current: 1A, Capacitance: 15pF, Contact Plating: Tin, Matte, Current Rating: 1A, and DC Rated Voltage: 50V. 1N4001 is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Onsemi
Category
Semiconductors

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Parameters

Average Rectified Current1A
Capacitance15pF
Contact PlatingTin, Matte
Current Rating1A
DC Rated Voltage50V
Diameter2.72mm
Element ConfigurationSingle
Forward Current1A
Height5.2mm
Lead FreeLead Free
Length5.2mm
Max Forward Surge Current (Ifsm)30A
Max Operating Temperature175°C
Max Repetitive Reverse Voltage (Vrrm)50V
Max Reverse Current5uA
Max Reverse Voltage (DC)50V
Max Surge Current30A
Min Operating Temperature-55°C
MountThrough Hole
Output Current1A
Package/CaseDO-41
Package Quantity1000
PackagingTape and Reel
Peak Non-Repetitive Surge Current30A
PolarityStandard
Power Dissipation3W
Radiation HardeningNo
Reach SVHC CompliantNo
Reverse Voltage50V
RoHSCompliant
RoHS CompliantYes
Weight0.245g