Infineon
BAS40-05
Dual silicon Schottky diode with a common-cathode configuration in a SOT-23 package for high-speed switching, circuit protection, voltage clamping, and signal detection or mixing applications. It is rated for 40 V reverse voltage, 120 mA forward current, and 200 mA non-repetitive peak surge forward current. The device provides low forward voltage characteristics, with a typical 310 mV at 1 mA and 450 mV at 10 mA, and has low capacitance of 3 pF typical at 0 V and 1 MHz. Maximum junction temperature is 150 °C, with an operating temperature range of -55 °C to 125 °C and storage range of -55 °C to 150 °C. The BAS40 family is Pb-free and RoHS compliant and is qualified to AEC-Q101.
BAT60B
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 10V V(RRM), Silicon, SOD-323, 2 PIN
BC849B
The BC849B is a NPN bipolar junction transistor with a collector base voltage rating of 30V and an emitter base voltage rating of 6V. It has a collector emitter saturation voltage of 600mV and a maximum collector current of 100mA. The transistor is packaged in a small outline package with dimensions of 2.9mm in length and 1.3mm in width, and 1mm in height. It is rated for operation at temperatures up to 150°C and can handle a maximum power dissipation of 330mW. The BC849B is available on tape and reel for easy handling and assembly.
BC857C
The Infineon BC857C is a PNP bipolar junction transistor with a collector base voltage of 50V and a maximum collector current of 100mA. It has a maximum operating frequency of 250MHz and a maximum power dissipation of 330mW. The transistor is packaged in a small outline R-PDSO-G3 package and is available on tape and reel. It has a height of 0.9mm, length of 2.9mm, and width of 1.3mm. The transistor is suitable for use in high-frequency applications and can operate at a maximum temperature of 150°C.
BCP51-16
The BCP51-16 is a surface mount PNP transistor with a collector base voltage of 45V and a maximum collector current of 1A. It operates at a maximum frequency of 125MHz and has a maximum power dissipation of 2W. The transistor is packaged in a SOT-223 case and is RoHS compliant. It can withstand a maximum operating temperature of 150°C.
BSC014N04LS
The BSC014N04LS is a surface mount MOSFET with a maximum drain to source voltage of 40V and continuous drain current of 32A. It has a maximum power dissipation of 2.5W and an on-resistance of 1.4 milliohms. The device is packaged in a 8-pin TDSON-8FL package and is lead free and RoHS compliant. It is suitable for use in a variety of applications including power supplies and motor control circuits.
BSC050N04LSG
The BSC050N04LSG is a 40V N-Channel MOSFET with a maximum continuous drain current of 85A. It features a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is packaged in a SMALL OUTLINE, R-PDSO-F5 package and is RoHS compliant. It has a maximum power dissipation of 57W and a threshold voltage of 1.2V.
BSC0902NS
The BSC0902NS is a 100A MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 48W and is lead free. The device is packaged in a small outline R-PDSO-F5 package and is available in tape and reel packaging. The BSC0902NS is RoHS compliant and features a turn-off delay time of 21ns and a turn-on delay time of 4.2ns.
BSC0904NSI
Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
BSC090N03LSGATMA1
N-channel silicon MOSFET featuring 30V drain-source voltage and 48A continuous drain current. Offers low on-state resistance of 7.5mR (typical) and 9mR (max) at 25°C. Designed for surface mount applications with a TDSON-8 plastic package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 32W. Halogen-free and RoHS compliant.
BSC093N04LSGATMA1
N-channel power MOSFET featuring 40V drain-source voltage and 13A continuous drain current. Offers low on-state resistance of 9.3mΩ (typical) and 7.8mΩ (drain-to-source). Designed for surface mount applications with a TDSON-8 package, this silicon metal-oxide semiconductor FET operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 35W. Includes fast switching characteristics with turn-on delay of 3.6ns and fall time of 2.8ns.
BSC093N15NS5
This device is an N-channel power MOSFET rated for 150 V drain-source voltage and up to 87 A drain current. It is specified with a maximum on-resistance of 9.3 mΩ and is housed in a SuperSO8 5x6 package identified by Infineon as PG-TDSON-8-7. The part belongs to the OptiMOS™ 5 150 V family and is intended for low-voltage drives, telecom equipment, and solar applications. Infineon highlights lower output charge, ultra-low reverse recovery charge, and increased commutation ruggedness for higher switching-frequency operation.
BSZ042N04NS
Power Field-Effect Transistor, 40A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
BSZ0901NSI
Power Field-Effect Transistor, 25A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
BTN8982TA
The BTN8982TA is a half bridge based peripheral driver from Infineon, designed for operation within a 8-18V supply voltage range. It features a single terminal position and 7 terminals in total. The device is packaged in a TO-263, 7 PIN format and is compliant with AEC-Q100 screening level. It is a single-function device with a width of 9.25mm and a length of 10mm.
BTS6142D
IC HIGH SIDE PWR SWITCH DPAK-5
BTS7960
The BTS7960P is a TO-220-7 packaged DMOS logic driver IC from Infineon. It features fault protection against over temperature and short circuit conditions. The device operates over a temperature range of -40°C to 150°C and is suitable for through hole mounting. The BTS7960P is not RoHS compliant and contains lead.
BTS7960B
Half Bridge Based Peripheral Driver, 62A, MOS, PDSO7, PLASTIC, TO-263, 7 PIN
BTS7960P
TO-220-7 60A 40A/Channel DMOS Logic Driver IC
IPB020N08N5ATMA1
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2