BSC0904NSI
Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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About BSC0904NSI
The Infineon BSC0904NSI Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8. Key parameters include Continuous Drain Current (ID): 78A, Drain to Source Voltage (Vdss): 30V, Fall Time: 3ns, Gate to Source Voltage (Vgs): 20V, and Halogen Free: Halogen Free. BSC0904NSI is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 772 KB
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Parameters
| Continuous Drain Current (ID) | 78A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 37W |
| Min Operating Temperature | -55°C |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 3.7mR |
| Reach SVHC Compliant | Yes |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 3.3ns |