BSC0904NSI

Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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About BSC0904NSI

The Infineon BSC0904NSI Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8. Key parameters include Continuous Drain Current (ID): 78A, Drain to Source Voltage (Vdss): 30V, Fall Time: 3ns, Gate to Source Voltage (Vgs): 20V, and Halogen Free: Halogen Free. BSC0904NSI is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Infineon
Category
Semiconductors
File Size
772 KB

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Parameters

Continuous Drain Current (ID)78A
Drain to Source Voltage (Vdss)30V
Fall Time3ns
Gate to Source Voltage (Vgs)20V
Halogen FreeHalogen Free
Input Capacitance1.1nF
Max Operating Temperature150°C
Max Power Dissipation37W
Min Operating Temperature-55°C
Package Quantity1
PackagingTape and Reel
Rds On Max3.7mR
Reach SVHC CompliantYes
RoHSCompliant
RoHS CompliantYes
SeriesOptiMOS™
Turn-Off Delay Time16ns
Turn-On Delay Time3.3ns