BSC093N15NS5
This device is an N-channel power MOSFET rated for 150 V drain-source voltage and up to 87 A drain current. It is specified with a maximum on-resistance of 9.3 mΩ and is housed in a SuperSO8 5x6 package identified by Infineon as PG-TDSON-8-7. The part belongs to the OptiMOS™ 5 150 V family and is intended for low-voltage drives, telecom equipment, and solar applications. Infineon highlights lower output charge, ultra-low reverse recovery charge, and increased commutation ruggedness for higher switching-frequency operation.
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About BSC093N15NS5
The Infineon BSC093N15NS5 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: This device is an N-channel power MOSFET rated for 150 V drain-source voltage and up to 87 A drain current. It is specified with a maximum on-resistance of 9.3 mΩ and is housed in a SuperSO8 5x6 package identified by Infineon as PG-TDSON-8-7. The part belongs to the OptiMOS™ 5 150 V family and is intended for low-voltage drives, telecom equipment, and solar applications. Infineon highlights lower output charge, ultra-low reverse recovery charge, and increased commutation ruggedness for higher switching-frequency operation.. Key parameters include Eccn Code: EAR99, Military Spec: False, Number of Elements: 1, Number of Terminals: 5, and REACH: Compliant. BSC093N15NS5 is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
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Parameters
| Eccn Code | EAR99 |
| Military Spec | False |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| REACH | Compliant |
| RoHS | Yes |
| Terminal Position | DUAL |