BSC093N04LSGATMA1
N-channel power MOSFET featuring 40V drain-source voltage and 13A continuous drain current. Offers low on-state resistance of 9.3mΩ (typical) and 7.8mΩ (drain-to-source). Designed for surface mount applications with a TDSON-8 package, this silicon metal-oxide semiconductor FET operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 35W. Includes fast switching characteristics with turn-on delay of 3.6ns and fall time of 2.8ns.
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About BSC093N04LSGATMA1
The Infineon BSC093N04LSGATMA1 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel power MOSFET featuring 40V drain-source voltage and 13A continuous drain current. Offers low on-state resistance of 9.3mΩ (typical) and 7.8mΩ (drain-to-source). Designed for surface mount applications with a TDSON-8 package, this silicon metal-oxide semiconductor FET operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 35W. Includes fast switching characteristics with turn-on delay of 3.6ns and fall time of 2.8ns.. Key parameters include Contact Plating: Tin, Matte, Continuous Drain Current (ID): 13A, Drain to Source Resistance: 7.8mR, Drain to Source Voltage (Vdss): 40V, and Fall Time: 2.8ns. BSC093N04LSGATMA1 is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 465 KB
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Parameters
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 7.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 35W |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 9.3mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Quest | 1,3696—————View offer |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 3.6ns |