BSZ042N04NS
Power Field-Effect Transistor, 40A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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About BSZ042N04NS
The Infineon BSZ042N04NS Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 40A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8. Key parameters include Continuous Drain Current (ID): 40A, Fall Time: 4.2ns, Gate to Source Voltage (Vgs): 20V, Halogen Free: Halogen Free, and Height: 1.1mm. BSZ042N04NS is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
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Parameters
| Continuous Drain Current (ID) | 40A |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 3.7nF |
| Length | 3.4mm |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 69W |
| Min Operating Temperature | -55°C |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Rds On Max | 4.2mR |
| Reach SVHC Compliant | No |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 14ns |
| Width | 3.4mm |