Infineon
IPB036N12N3GATMA1
Power Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN
IPB054N08N3GATMA1
Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
IPB072N15N3GATMA1
N-Channel Power MOSFET, 150V Vdss, 100A continuous drain current, and 7.2mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package. Maximum power dissipation is 300W, with operating temperatures ranging from -55°C to 175°C. The component is RoHS compliant and Halogen Free.
IR2101PBF
Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDIP8, LEAD FREE, PLASTIC, MS-001AB, DIP-8
IR2101STRPBF
Automotive-grade half-bridge MOSFET driver IC, operating from a 10V to 20V supply. Features dual high and low-side non-inverting outputs, capable of driving up to 0.36A. This 8-terminal, SOIC N package component offers a wide operating temperature range from -40°C to 125°C.
IR2104PBF
The IR2104PBF is a half bridge based mosfet driver with a supply voltage range of 10 to 20 volts and a maximum operating temperature of 125 degrees Celsius. It is available in a DIP-8 package and features a dual terminal position. The device is designed for use in automotive applications and has a number of functions. It has a width of 7.62mm and a length of 9.88mm.
IR2104S
Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDSO8, MS-012AA, SOIC-8
IR2104STRPBF
Automotive-grade Half Bridge MOSFET Driver IC, featuring CMOS technology and an 8-terminal SOIC-8 package. Operates across a wide temperature range from -40°C to 125°C, with a nominal supply voltage of 15V (10V-20V range). This single-function interface IC is designed for efficient power management applications.
IR2110PBF
Automotive-grade Half Bridge MOSFET Driver IC, featuring a 14-terminal PDIP package. Operates across a supply voltage range of 3.3V to 20V, with a nominal 15V. Delivers 2.5A current for efficient MOSFET switching. Designed for dual terminal configuration with a temperature grade suitable for automotive applications, operating from -40°C to 125°C.
IR2110S
The IR2110S is a half bridge based MOSFET driver from Infineon, designed to operate within a temperature range of -40°C to 125°C. It features a supply voltage range of 3.3 to 20V and is available in the SOIC-16 package type. This device is suitable for use in automotive applications due to its temperature grade of AUTOMOTIVE. The IR2110S has 16 terminals and supports a single function, making it a versatile component for power management ICs.
IR2113PBF
Automotive-grade Half Bridge MOSFET Driver IC, featuring a 2.5A output current capability. This integrated circuit operates with a supply voltage range of 3.3V to 20V, with a nominal 15V. Designed for high-side and low-side MOSFET control, it offers dual terminal positioning within a 14-pin PDIP package. Operating temperature range spans from -40°C to 125°C.
IR2130PBF
Half Bridge Based MOSFET Driver, 0.5A, MOS, PDIP28, LEAD FREE, PLASTIC, MS-011AB, DIP-28
IR2184PBF
The IR2184PBF is a half bridge based MOSFET driver from Infineon, designed for automotive applications. It operates within a temperature range of -40 to 125 degrees Celsius and has a nominal supply voltage of 15V. The device features 8 terminals and a DUAL terminal position. It is available in an 8-pin DIP package with dimensions of 7.62mm in width and 9.88mm in length.
IR2184STRPBF
Automotive-grade half-bridge MOSFET driver IC, featuring a 15V nominal supply voltage (10V-20V range) and 2.3A output current. This CMOS interface IC is housed in an 8-terminal SOIC-8 (PDSO8) package with dual terminal positions. Operating across a -40°C to 125°C temperature range, it offers a single function for efficient power management.
IRF3710PBF
This N-channel silicon power MOSFET is rated for 100 V drain-to-source voltage and 57 A continuous drain current at 25°C case temperature. It is specified with a maximum drain-to-source on-resistance of 23 mΩ at VGS = 10 V and uses the TO-220AB through-hole package. The device supports operation from -55°C to 175°C and is fully avalanche rated with fast switching characteristics. The datasheet also identifies dynamic dv/dt capability and lead-free construction for industrial applications.
IRF540N
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRFB7430PBF
N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single-element silicon transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 409A. Housed in a TO-220AB package with 3 through-hole pins and a tab, it boasts a low drain-source on-resistance of 1.3 mOhm at 10V. Operating temperature range is -55°C to 175°C, with a maximum power dissipation of 375W.
IRFB7440PBF
N-channel Power MOSFET featuring 40V drain-source voltage and 172A continuous drain current. This single-element HEXFET technology MOSFET is housed in a TO-220AB package with 3 through-hole pins and a tab. It offers a low drain-source on-resistance of 2.5 mΩ at 10V and a maximum power dissipation of 143W, operating across a wide temperature range of -55°C to 175°C.
IRFB7746PBF
Power Field-Effect Transistor,
IRS2092STRPBF
Protected Digital Audio Amplifier