BC849B

The BC849B is a NPN bipolar junction transistor with a collector base voltage rating of 30V and an emitter base voltage rating of 6V. It has a collector emitter saturation voltage of 600mV and a maximum collector current of 100mA. The transistor is packaged in a small outline package with dimensions of 2.9mm in length and 1.3mm in width, and 1mm in height. It is rated for operation at temperatures up to 150°C and can handle a maximum power dissipation of 330mW. The BC849B is available on tape and reel for easy handling and assembly.

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About BC849B

The Infineon BC849B Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The BC849B is a NPN bipolar junction transistor with a collector base voltage rating of 30V and an emitter base voltage rating of 6V. It has a collector emitter saturation voltage of 600mV and a maximum collector current of 100mA. The transistor is packaged in a small outline package with dimensions of 2.9mm in length and 1.3mm in width, and 1mm in height. It is rated for operation at temperatures up to 150°C and can handle a maximum power dissipation of 330mW. The BC849B is available on tape and reel for easy handling and assembly.. Key parameters include Collector Base Voltage (VCBO): 30V, Collector Emitter Saturation Voltage: 600mV, Emitter Base Voltage (VEBO): 6V, Height: 1mm, and Length: 2.9mm. BC849B is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Infineon
Category
Semiconductors
File Size
890 KB

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Parameters

Collector Base Voltage (VCBO)30V
Collector Emitter Saturation Voltage600mV
Emitter Base Voltage (VEBO)6V
Height1mm
Length2.9mm
Max Collector Current100mA
Max Frequency250MHz
Max Operating Temperature150°C
Max Power Dissipation330mW
Min Operating Temperature-65°C
Package/CaseSOT
PackagingTape and Reel
PolarityNPN
RoHSCompliant
Width1.3mm