IPB020N08N5ATMA1
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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About IPB020N08N5ATMA1
The Infineon IPB020N08N5ATMA1 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2. Key parameters include Eccn Code: EAR99, JEDEC Package Code: TO-263AB, Lead Free: Yes, Military Spec: False, and Number of Elements: 1. IPB020N08N5ATMA1 is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 955 KB
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Parameters
| Eccn Code | EAR99 |
| JEDEC Package Code | TO-263AB |
| Lead Free | Yes |
| Military Spec | False |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| REACH | not_compliant |
| RoHS | Yes |
| Terminal Position | SINGLE |