BSZ0901NSI
Power Field-Effect Transistor, 25A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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About BSZ0901NSI
The Infineon BSZ0901NSI Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 25A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8. Key parameters include Continuous Drain Current (ID): 40A, Drain to Source Breakdown Voltage: 30V, Drain to Source Resistance: 2.1mR, Fall Time: 4.6ns, and Gate to Source Voltage (Vgs): 20V. BSZ0901NSI is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Infineon
- Category
- Semiconductors
- File Size
- 599 KB
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Parameters
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.1mR |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 69W |
| Min Operating Temperature | -55°C |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
| Rds On Max | 2.1mR |
| Reach SVHC Compliant | Yes |
| Resistance | 0.0009R |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 27ns |