BC857C

The Infineon BC857C is a PNP bipolar junction transistor with a collector base voltage of 50V and a maximum collector current of 100mA. It has a maximum operating frequency of 250MHz and a maximum power dissipation of 330mW. The transistor is packaged in a small outline R-PDSO-G3 package and is available on tape and reel. It has a height of 0.9mm, length of 2.9mm, and width of 1.3mm. The transistor is suitable for use in high-frequency applications and can operate at a maximum temperature of 150°C.

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About BC857C

The Infineon BC857C Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The Infineon BC857C is a PNP bipolar junction transistor with a collector base voltage of 50V and a maximum collector current of 100mA. It has a maximum operating frequency of 250MHz and a maximum power dissipation of 330mW. The transistor is packaged in a small outline R-PDSO-G3 package and is available on tape and reel. It has a height of 0.9mm, length of 2.9mm, and width of 1.3mm. The transistor is suitable for use in high-frequency applications and can operate at a maximum temperature of 150°C.. Key parameters include Collector Base Voltage (VCBO): 50V, Collector Emitter Saturation Voltage: 650mV, Conrad: 2,2491$0.0801$0.0728$0.0704$0.068—View offer, Emitter Base Voltage (VEBO): 5V, and Height: 0.9mm. BC857C is manufactured by Infineon as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Infineon
Category
Semiconductors
File Size
78 KB

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Parameters

Collector Base Voltage (VCBO)50V
Collector Emitter Saturation Voltage650mV
Conrad2,2491$0.0801$0.0728$0.0704$0.068—View offer
Emitter Base Voltage (VEBO)5V
Height0.9mm
Length2.9mm
Max Collector Current100mA
Max Frequency250MHz
Max Operating Temperature150°C
Max Power Dissipation330mW
Package/CaseSOT
PackagingTape and Reel
PolarityPNP
RoHSCompliant
Width1.3mm