IRFZ44N
N-Channel Enhancement-Mode MOSFET with dynamic dv/dt rating, repetitive avalanche rated, 175°C operating temperature, ease of paralleling, fast switching for high efficiency, and simple drive requirements. Packaged in JEDEC TO-220AB molded plastic body. Terminals are solderable per MIL-STD-750, Method 2026. High temperature soldering is guaranteed at 250°C/10 seconds, 0.17\" (4.3mm) from case. Mounting torque is 10 in-lbs maximum. Weight is 2.0g.
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About IRFZ44N
The Vishay IRFZ44N Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Enhancement-Mode MOSFET with dynamic dv/dt rating, repetitive avalanche rated, 175°C operating temperature, ease of paralleling, fast switching for high efficiency, and simple drive requirements. Packaged in JEDEC TO-220AB molded plastic body. Terminals are solderable per MIL-STD-750, Method 2026. High temperature soldering is guaranteed at 250°C/10 seconds, 0.17\" (4.3mm) from case. Mounting torque is 10 in-lbs maximum. Weight is 2.0g.. Key parameters include Avalanche Current: 25, Case: JEDEC TO-220AB molded plastic body, Continuous Drain Current (Tc = 100°C, VGS = 10V): 35, Continuous Drain Current (Tc = 25°C, VGS = 10V): 49, and Continuous Source Current: 49. IRFZ44N is manufactured by Vishay as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Vishay
- Category
- Semiconductors
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Parameters
| Avalanche Current | 25 |
| Case | JEDEC TO-220AB molded plastic body |
| Continuous Drain Current (Tc = 100°C, VGS = 10V) | 35 |
| Continuous Drain Current (Tc = 25°C, VGS = 10V) | 49 |
| Continuous Source Current | 49 |
| Diode Forward Voltage (Max) | 1.3 |
| Diode Forward Voltage (Typ) | 0.93 |
| Drain-Source Breakdown Voltage (Min) | 55 |
| Drain-Source Leakage Current (Max) | 25 |
| Drain-Source On-State Resistance (VGS=10V, ID=25A, Max) | 20 |
| Drain-Source On-State Resistance (VGS=10V, ID=25A, Typ) | 16 |
| Drain-Source On-State Resistance (VGS=6V, ID=23A, Max) | 22 |
| Drain-Source On-State Resistance (VGS=6V, ID=23A, Typ) | 18 |
| Drain-Source Voltage | 55 |
| Eccn Code | EAR99 |
| Fall Time (Max) | 210 |
| Fall Time (Typ) | 165 |
| Forward Transconductance (Min) | 17 |
| Forward Transconductance (Typ) | 78 |
| Gate-Drain ('Miller') Charge (Typ) | 13 |
| Gate-Drain ('Miller') Charge (Typ) | 13nC |
| Gate-Source Charge (Typ) | 11 |
| Gate-Source Leakage (Max) | ±100 |
| Gate-Source Voltage | ±20 |
| Gate Threshold Voltage (Max) | 4.0 |
| Gate Threshold Voltage (Min) | 2.0 |
| Input Capacitance (Typ) | 3223 |
| JEDEC Package Code | TO-220AB |
| Junction-to-Ambient Thermal Resistance | 62 |
| Junction-to-Case Thermal Resistance | 1.6 |
| Maximum Power Dissipation (Tc = 25°C) | 94 |
| Max Operating Temperature | 175 |
| Military Spec | False |
| Mounting Torque | 10 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Junction and Storage Temperature Range | -55 to 175 |
| Output Capacitance (Typ) | 308 |
| Pulsed Drain Current | 160 |
| Pulsed Source Current | 160 |
| REACH | unknown |
| Repetitive Avalanche Energy | 11 |
| Reverse Transfer Capacitance (Typ) | 135 |
| Rise Time (Max) | 240 |
| Rise Time (Typ) | 185 |
| RoHS | No |
| Single Pulse Avalanche Energy | 210 |
| Source-Drain Reverse Recovery Charge (Typ) | 93 |
| Source-Drain Reverse Recovery Time (Typ) | 53 |
| Standard | MIL-STD-750 Method 2026 |
| Terminal Position | SINGLE |
| Total Gate Charge (VGS=10V, Max) | 65 |
| Total Gate Charge (VGS=10V, Typ) | 60 |
| Total Gate Charge (VGS=5V, Max) | 40 |
| Total Gate Charge (VGS=5V, Typ) | 29 |
| Turn-Off Delay Time (Max) | 119 |
| Turn-Off Delay Time (Typ) | 85 |
| Turn-On Delay Time (Max) | 34 |
| Turn-On Delay Time (Typ) | 19 |
| Weight | 2.0 |