IRF2807
Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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About IRF2807
The International Rectifier IRF2807 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN. Key parameters include Continuous Drain Current (ID): 82A, Current Rating: 82A, DC Rated Voltage: 75V, Drain-source On Resistance-Max: 13MR, and Drain to Source Breakdown Voltage: 75V. IRF2807 is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
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Parameters
| Continuous Drain Current (ID) | 82A |
| Current Rating | 82A |
| DC Rated Voltage | 75V |
| Drain-source On Resistance-Max | 13MR |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Bulk |
| RoHS | Not Compliant |
| RoHS Compliant | No |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 13ns |