IRFB4410PBF
N-Channel Power MOSFET featuring 100V drain-source voltage and 88A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 10mΩ on-state resistance and 200W power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching parameters include a 24ns turn-on delay and 50ns fall time.
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About IRFB4410PBF
The International Rectifier IRFB4410PBF Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Power MOSFET featuring 100V drain-source voltage and 88A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 10mΩ on-state resistance and 200W power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching parameters include a 24ns turn-on delay and 50ns fall time.. Key parameters include Continuous Drain Current (ID): 88A, Current Rating: 96A, DC Rated Voltage: 100V, Drain-source On Resistance-Max: 10MR, and Drain to Source Voltage (Vdss): 100V. IRFB4410PBF is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
- File Size
- 348 KB
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Parameters
| Continuous Drain Current (ID) | 88A |
| Current Rating | 96A |
| DC Rated Voltage | 100V |
| Drain-source On Resistance-Max | 10MR |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 5.15nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 200W |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 10mR |
| Package/Case | TO-220AB |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 38ns |
| RoHS | Compliant |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 24ns |
| Width | 4.82mm |