EPC2053
N-Channel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for high-power applications. Features a low on-resistance of 0.0038 ohms and a drain-source voltage rating of 100V. Supports a continuous drain current of 48A. Operates across a temperature range of -40°C to 150°C. This single-element device is presented in a DIE-28 package.
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About EPC2053
The Efficient Power Conversion EPC2053 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for high-power applications. Features a low on-resistance of 0.0038 ohms and a drain-source voltage rating of 100V. Supports a continuous drain current of 48A. Operates across a temperature range of -40°C to 150°C. This single-element device is presented in a DIE-28 package.. Key parameters include Max Operating Temperature: 150, Military Spec: False, Min Operating Temperature: -40, Number of Elements: 1, and Number of Terminals: 28. EPC2053 is manufactured by Efficient Power Conversion as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Efficient Power Conversion
- Category
- Semiconductors
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Parameters
| Max Operating Temperature | 150 |
| Military Spec | False |
| Min Operating Temperature | -40 |
| Number of Elements | 1 |
| Number of Terminals | 28 |
| REACH | unknown |
| RoHS | Yes |
| Terminal Position | UNSPECIFIED |