EPC2034C
N-channel Gallium Nitride (GaN) power MOSFET featuring a low on-resistance of 0.008 ohms and a drain-source voltage rating of 200V. This single-element transistor is designed for high-power applications, capable of handling a continuous drain current of 48A. It operates within a temperature range of -40°C to 150°C and utilizes a 24-terminal die with upper terminal positioning.
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About EPC2034C
The Efficient Power Conversion EPC2034C Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel Gallium Nitride (GaN) power MOSFET featuring a low on-resistance of 0.008 ohms and a drain-source voltage rating of 200V. This single-element transistor is designed for high-power applications, capable of handling a continuous drain current of 48A. It operates within a temperature range of -40°C to 150°C and utilizes a 24-terminal die with upper terminal positioning.. Key parameters include Max Operating Temperature: 150, Military Spec: False, Min Operating Temperature: -40, Number of Elements: 1, and Number of Terminals: 24. EPC2034C is manufactured by Efficient Power Conversion as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Efficient Power Conversion
- Category
- Semiconductors
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Parameters
| Max Operating Temperature | 150 |
| Military Spec | False |
| Min Operating Temperature | -40 |
| Number of Elements | 1 |
| Number of Terminals | 24 |
| REACH | unknown |
| RoHS | Yes |
| Terminal Position | UPPER |