EPC2010C
N-channel silicon MOSFET featuring 200V drain-source voltage and 22A continuous drain current. Offers a low on-resistance of 0.025 ohms, enabling efficient power switching. Designed with a 1-element configuration and 7 terminals, operating across a temperature range of -40°C to 150°C. This metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.
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About EPC2010C
The Efficient Power Conversion EPC2010C Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel silicon MOSFET featuring 200V drain-source voltage and 22A continuous drain current. Offers a low on-resistance of 0.025 ohms, enabling efficient power switching. Designed with a 1-element configuration and 7 terminals, operating across a temperature range of -40°C to 150°C. This metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.. Key parameters include Eccn Code: EAR99, Max Operating Temperature: 150, Military Spec: False, Min Operating Temperature: -40, and Number of Elements: 1. EPC2010C is manufactured by Efficient Power Conversion as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Efficient Power Conversion
- Category
- Semiconductors
- File Size
- 1 MB
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Parameters
| Eccn Code | EAR99 |
| Max Operating Temperature | 150 |
| Military Spec | False |
| Min Operating Temperature | -40 |
| Number of Elements | 1 |
| Number of Terminals | 7 |
| REACH | Compliant |
| RoHS | Yes |
| Terminal Position | UNSPECIFIED |