EPC2014C
N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-performance power applications. Features a continuous drain current (I(D)) of 10A and a drain-source voltage (V(DS)) of 40V, with a low on-resistance (R(DS(on))) of 0.016 ohms. This single-element device utilizes a 5-terminal configuration and is HALOGEN FREE and ROHS COMPLIANT.
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About EPC2014C
The Efficient Power Conversion EPC2014C Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-performance power applications. Features a continuous drain current (I(D)) of 10A and a drain-source voltage (V(DS)) of 40V, with a low on-resistance (R(DS(on))) of 0.016 ohms. This single-element device utilizes a 5-terminal configuration and is HALOGEN FREE and ROHS COMPLIANT.. Key parameters include Eccn Code: EAR99, Military Spec: False, Number of Elements: 1, Number of Terminals: 5, and REACH: Compliant. EPC2014C is manufactured by Efficient Power Conversion as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Efficient Power Conversion
- Category
- Semiconductors
- File Size
- 1 MB
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Parameters
| Eccn Code | EAR99 |
| Military Spec | False |
| Number of Elements | 1 |
| Number of Terminals | 5 |
| REACH | Compliant |
| RoHS | Yes |
| Terminal Position | UNSPECIFIED |