2N7000

N-channel MOSFET, TO-92 package, offering 60V drain-source breakdown voltage and 350mA continuous drain current. Features include 5.3 Ohm on-state resistance, 43pF input capacitance, and 5ns turn-on delay. Operates from -55°C to 150°C with 1W maximum power dissipation. Through-hole mount, RoHS compliant.

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About 2N7000

The Stmicroelectronics 2N7000 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: N-channel MOSFET, TO-92 package, offering 60V drain-source breakdown voltage and 350mA continuous drain current. Features include 5.3 Ohm on-state resistance, 43pF input capacitance, and 5ns turn-on delay. Operates from -55°C to 150°C with 1W maximum power dissipation. Through-hole mount, RoHS compliant.. Key parameters include Continuous Drain Current (ID): 350mA, Current Rating: 200mA, DC Rated Voltage: 60V, Drain to Source Breakdown Voltage: 60V, and Drain to Source Resistance: 1.8R. 2N7000 is manufactured by Stmicroelectronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Stmicroelectronics
Category
Semiconductors

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Parameters

Continuous Drain Current (ID)350mA
Current Rating200mA
DC Rated Voltage60V
Drain to Source Breakdown Voltage60V
Drain to Source Resistance1.8R
Drain to Source Voltage (Vdss)60V
Dual Supply Voltage60V
Gate to Source Voltage (Vgs)18V
Height4.95mm
Input Capacitance43pF
Lead FreeLead Free
Lead Pitch1.27mm
Length4.95mm
Max Operating Temperature150°C
Max Power Dissipation1W
Min Operating Temperature-55°C
MountThrough Hole
Nominal Vgs2.1V
On-State Resistance5.3R
Package/CaseTO-92
Package Quantity2500
PackagingBulk
PolarityN-CHANNEL
Power Dissipation1W
Rds On Max5R
Reach SVHC CompliantNo
RoHSCompliant
RoHS CompliantYes
RS Americas—20$0.2—EachView offer
SeriesSTripFET™
Threshold Voltage2.1V
Turn-Off Delay Time7ns
Turn-On Delay Time5ns
Width3.94mm