IRF3205
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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About IRF3205
The International Rectifier IRF3205 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN. Key parameters include Continuous Drain Current (ID): 110A, Current Rating: 110A, DC Rated Voltage: 55V, Drain to Source Breakdown Voltage: 55V, and Drain to Source Resistance: 8mR. IRF3205 is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
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Parameters
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| DC Rated Voltage | 55V |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8mR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.25nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS | Not CompliantNo |
| RoHS Compliant | No |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 14ns |