IRFP260N
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
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About IRFP260N
The International Rectifier IRFP260N Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN. Key parameters include Continuous Drain Current (ID): 50A, Gate to Source Voltage (Vgs): 20V, Max Operating Temperature: 175°C, Min Operating Temperature: -55°C, and Mount: Through Hole. IRFP260N is manufactured by International Rectifier as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- International Rectifier
- Category
- Semiconductors
- File Size
- 50 KB
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Parameters
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 300W |
| RoHS | Not Compliant |
| RoHS Compliant | No |