Semiconductors
IRFP4468PBF
N-Channel Power MOSFET, 100V Drain-Source Voltage, 290A Continuous Drain Current, and 0.0026 ohm Drain-Source On-Resistance. Features a TO-247AC package for through-hole mounting, 520W maximum power dissipation, and a maximum operating temperature of 175°C. Includes 52ns turn-on delay and 160ns turn-off delay. RoHS compliant and lead-free.
IRFP460
N-channel power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. This silicon metal-oxide semiconductor field-effect transistor offers a low 270mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, it supports a maximum power dissipation of 280W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 18ns turn-on delay and a 58ns fall time.
IRFP90N20DPBF
N-Channel Power MOSFET featuring 200V drain-source voltage and 94A continuous drain current. Offers low 23mΩ on-state resistance and 580W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 23ns and turn-off delay of 43ns.
IRFS7530TRLPBF
The IRFS7530TRLPBF is a surface mount power MOSFET from International Rectifier, packaged in the D2PAK case. It can handle a maximum operating temperature of 175°C and a minimum of -55°C. The device has a maximum power dissipation of 375W and a continuous drain current of 195A. The gate to source voltage is 20V. The MOSFET has an input capacitance of 13.703nF and is lead free. It is RoHS compliant.
IRFZ44
N-Channel Power MOSFET featuring 60V Drain-to-Source Voltage (Vdss) and 50A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low Drain to Source Resistance of 28mΩ. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 150W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a turn-on delay time of 14ns and a fall time of 92ns.
IRFZ44E
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IRFZ44N
N-Channel Enhancement-Mode MOSFET with dynamic dv/dt rating, repetitive avalanche rated, 175°C operating temperature, ease of paralleling, fast switching for high efficiency, and simple drive requirements. Packaged in JEDEC TO-220AB molded plastic body. Terminals are solderable per MIL-STD-750, Method 2026. High temperature soldering is guaranteed at 250°C/10 seconds, 0.17\" (4.3mm) from case. Mounting torque is 10 in-lbs maximum. Weight is 2.0g.
IRG4BC30W
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
IRG4BC40W
The IRG4BC40W is a 600V insulated gate bipolar transistor with a maximum collector current of 40A. It is packaged in a TO-220-3 flange mount configuration and is available in quantities of 50. The device is not RoHS compliant. The transistor has a maximum power dissipation of 160W and a collector emitter breakdown voltage of 600V.
IRG4PC50W
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN
IRL2203
The IRL2203NPBF is a 30V 116A power MOSFET packaged in a TO-220AB through hole package. It has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 180W. The device is RoHS compliant and lead free. It has a low on-resistance of 7mR and fast switching times of 11ns and 23ns.
IRL2203NPBF
30V 116A TO-220AB Through Hole HEXFET Power MOSFET
IRL540
N-Channel Power MOSFET with 100V drain-source voltage and 28A continuous drain current. Features low 77mΩ drain-source resistance and 150W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220-3 through-hole mount with a 3-pin configuration. Includes fast switching characteristics with turn-on delay of 8.5ns and fall time of 80ns.
IRLR024NTRPBF
N-Channel Power MOSFET, TO-252 package, offering 55V drain-source voltage and 17A continuous drain current. Features low 80mΩ maximum drain-source on-resistance at a nominal 2V gate-source voltage. Operates across a wide temperature range from -55°C to 175°C with 45W maximum power dissipation. This surface-mount device includes fast switching characteristics with 7.1ns turn-on and 20ns turn-off delay times.
IRLR2905TRPBF
N-Channel Power MOSFET, DPAK package, offering 55V DC rated voltage and 42A continuous drain current. Features low on-resistance of 0.03ohm and 110W maximum power dissipation. Designed for surface mounting with a compact DPAK footprint (6.73mm L x 6.22mm W x 2.39mm H). Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 15ns. Lead-free and RoHS compliant.
IRLZ34NPBF
N-Channel Power MOSFET featuring 55V drain-source voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 35mΩ drain-source on-resistance and 68W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 8.9ns turn-on delay and 21ns turn-off delay.
IRLZ44N
A fast switching and low resistance, allowing it to be controlled by low-voltage signals (like 5V from an Arduino) to switch higher power loads, making it great for motor control, LED drivers, and power supplies. It's available in a common TO-220 package and features high current (around 47A) and voltage (55V) handling, offering efficiency in various power applications
IRS2092STRPBF
Protected Digital Audio Amplifier
IS25LP064A-JBLE
Industrial grade serial Flash memory IC with 67,108,864 words (64Mb) capacity. Features a maximum clock frequency of 133 MHz and operates across a temperature range of -40°C to 105°C. Supplied by a nominal 3V, with a voltage range of 2.3V to 3.6V. Packaged in an 8-terminal SOIC-8 (S-PDSO-G8) with dimensions of 5.28mm x 5.28mm.
IS25LP128F-JBLE
The IS25LP128F-JBLE is a serial FLASH memory IC with a maximum operating temperature of 105 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It has 8 terminals and is packaged in a SOP package with a width and length of 5.28mm. The IC operates on a supply voltage of 3V, with a maximum voltage of 3.6V and a minimum voltage of 2.3V. It has a clock frequency of up to 166MHz and a memory capacity of 16,777,216 words.