Semiconductors
IRFB3206PBF
N-Channel Power MOSFET featuring 60V drain-source voltage and 210A continuous drain current. Offers low 3mΩ drain-source on-resistance and 300W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include 6.54nF input capacitance and 4V threshold voltage.
IRFB3306PBF
The IRFB3306PBF is a 60V MOSFET with a continuous drain current of 160A and a maximum power dissipation of 230W. It has a drain-source on resistance of 4.2MR and a threshold voltage of 4V. The device is packaged in a TO-220AB lead free package and is suitable for through hole mounting. The operating temperature range is from -55°C to 175°C.
IRFB3607PBF
The IRFB3607PBF is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 80A and a drain-source voltage of 75V. The device has a maximum power dissipation of 140W and a gate to source voltage of 20V. It is available in a TO-220AB package with a lead-free termination and is RoHS compliant.
IRFB3806PBF
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
IRFB4110PBF
N-Channel Power MOSFET, 100V drain-source voltage, 180A continuous drain current, and 4.5mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting and a maximum power dissipation of 370W. Operating temperature range is -55°C to 175°C, with a gate-source voltage of 20V. RoHS compliant and lead-free.
IRFB4115PBF
The IRFB4115PBF is a TO-220AB packaged N-channel power MOSFET with a maximum drain current of 104A and a maximum drain-source voltage of 150V. It features a maximum on-resistance of 11 milliohms and a maximum power dissipation of 380W. The device operates over a temperature range of -55°C to 175°C and is RoHS compliant. The IRFB4115PBF is suitable for high-power switching applications.
IRFB4227PBF
N-Channel Power MOSFET, TO-220AB package, offering a 200V drain-source voltage (Vdss) and a continuous drain current (ID) of 65A. Features a low 24mΩ maximum drain-source on-resistance and a 330W maximum power dissipation. Operates across a wide temperature range from -40°C to 175°C. Includes a 5V nominal gate-source voltage (Vgs) and a 30V maximum gate-source voltage. This through-hole mounted component is RoHS compliant and lead-free.
IRFB4310PBF
The IRFB4310PBF is a 100V power MOSFET with a continuous drain current rating of 130A and a maximum operating temperature range of -55°C to 175°C. It features a low drain-source on resistance of 7mΩ and a high current rating of 140A. The device is packaged in a TO-220AB flange mount package and is compliant with RoHS regulations. It is suitable for high-power applications requiring a high level of reliability and performance.
IRFB4321PBF
The IRFB4321PBF is a TO-220AB lead free MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 85A and a drain to source voltage of 150V. The device is RoHS compliant and has a maximum power dissipation of 350W.
IRFB4410PBF
N-Channel Power MOSFET featuring 100V drain-source voltage and 88A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 10mΩ on-state resistance and 200W power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching parameters include a 24ns turn-on delay and 50ns fall time.
IRFB4710PBF
N-Channel Power MOSFET, 100V drain-source voltage, 75A continuous drain current, and 0.014 ohm maximum drain-source on-resistance. Features a TO-220AB through-hole package, 200W maximum power dissipation, and operates from -55°C to 175°C. Includes 6.16nF input capacitance and 35ns turn-on delay time. RoHS compliant and lead-free.
IRFB7430PBF
N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single-element silicon transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 409A. Housed in a TO-220AB package with 3 through-hole pins and a tab, it boasts a low drain-source on-resistance of 1.3 mOhm at 10V. Operating temperature range is -55°C to 175°C, with a maximum power dissipation of 375W.
IRFB7440PBF
N-channel Power MOSFET featuring 40V drain-source voltage and 172A continuous drain current. This single-element HEXFET technology MOSFET is housed in a TO-220AB package with 3 through-hole pins and a tab. It offers a low drain-source on-resistance of 2.5 mΩ at 10V and a maximum power dissipation of 143W, operating across a wide temperature range of -55°C to 175°C.
IRFB7534PBF
The IRFB7534PBF is a power MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 195A and a drain to source voltage of 60V. The device is packaged in a TO-220AB case and is designed for through-hole mounting. It is lead-free and RoHS compliant, with a maximum power dissipation of 294W.
IRFB7540PBF
The IRFB7540PBF is a power MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current rating of 110A and a drain to source voltage rating of 60V. The device is packaged in a TO-220AB case and is mounted through a hole. It has a maximum power dissipation of 99W and is RoHS compliant.
IRFB7546PBF
INTERNATIONAL RECTIFIER IRFB7546PBF MOSFET Transistor, N Channel, 75 A, 60 V, 0.006 ohm, 10 V, 3.7 V
IRFB7734PBF
The IRFB7734PBF is a power MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 183A and a gate to source voltage of 20V. The device is packaged in a TO-220AB case and is mounted through a hole. The IRFB7734PBF is lead free and RoHS compliant, and meets the requirements of the Reach SVHC directive. It has an input capacitance of 10.15nF and a maximum power dissipation of 290W.
IRFB7746PBF
Power Field-Effect Transistor,
IRFP260N
Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
IRFP2907
The IRFP2907 is a single-element power MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current rating of 209A and a drain-to-source breakdown voltage of 75V. The device is not RoHS compliant and contains lead. It is designed for through-hole mounting and has a power dissipation rating of 470W.